Monocrystalline semiconductor material photodiode module - has parallel line detectors as strips formed from monolithic block

摘要

The module is formed from a monocrystalline, semiconductor monolithic block for photoelectric transducing of impinging energy by wide range, parallel, line detectors. The latter are formed by strips (2) work out from the block (1), forming between them opposite, parallel reflection walls (3, 4) with <110> surface structure. On the strip top and lower sides are formed implantation layers (5, 6), on laminates, such that the radiation impingement angle in selectiveoy tilted w.r.t. the parallel reflection walls. Pref. monocrystaline semiconductor silicon is used for the photodiode, with chemical etching of the strips. ADVANTAGE - Increased quantum radiation yield and efficiency.