| 摘要 |
PURPOSE:To provide a doping apparatus capable of obtaining a p type or n type semiconductor having excellent properties, capable of obtaining properties uniform over a large area and capable of manufacturing a large sized semiconductor device at a low cost. CONSTITUTION:The inside of a chamber 101 is provided with a pair of electrodes, i.e., an anode 103 and a cathode 104. The anode 103 is set with a sample 105. The sample 105 can be heated by a heater 106. The cathode 104 is connected to a power source 108 for generating a plasma 107 between the anode 103 and the cathode 104. A target 109 is set on the cathode 104. An inert gas is introduced into the chamber 101 from a cylinder 110. Furthermore, the inside of the chamber 101 is provided with light sources 112 and 113 of ultraviolet light as well, and irradiation on the surface of the sample 105 is permitted as occasion demands. |
