Heteroepitaxy by growth of thermally strained homojunction superlattice buffer layers

摘要

Preferred embodiments disclose include methods of fabrication and integrated circuits (30) in GaAs layers (38, 40) on silicon substrates (32) with the gallium arsenide grown by MBE or MOCVD and containing thermally-strained superlattices (36) and post-growth high temperature annealing to lower defect density. The annealing confines dislocations to a thin network at the interface of the GaAs buffer layer (34) and the silicon substrate (32).