| 摘要 |
PURPOSE:To achieve the small diameter of the grain of a fuse and the low resistance of the fuse, by forming the second conductor film and the following conductor film. CONSTITUTION:A field insulating film 2 and a gate insulating film 3 are formed on the main surface of a P type single crystal Si. A first poly-Si film 4 is deposited on the entire surface as the first conductor film. A capacitor electrode 5 is formed. Then, a second poly-Si film 7 is formed as the second conductor film, by which a fuse is formed on the entire surface. A silicide film 8 is deposited on the film 7. The film 8 has polycide structure. Thus the increase in size of the poly-Si crystal can be suppressed, and the decrease in mechanical strength and the increase in resistance can be prevented, without the thermal oxidation process of the first conductor film. The breakdown of the fuse is prevented. |
