| 摘要 |
PURPOSE:To prevent disconnection by a method wherein the first opening is provided in an insulated layer adjacent to a semiconductor element region on an insulated substrate, the second opening reaching the substrate is then provided on the surface insulated layer after a primary wiring is extended as far as the bottom of the hole, and a secondary wiring is formed and connected with the primary wiring end in the hole. CONSTITUTION:An MOS transistor region 43 and a gate oxidized film 44 are formed on a sapphire substrate 41 adjacently to a fiel oxidized film 42. An opening is provided in the oxidized film 42, a polycrystalline Si 45 for a gate electrode and a primary wiring is accumulated to patterning, which is extended so as to cover a part of the hole bottom. Next, it is covered with CVD SiO2 46, the primary wiring end and the substrate are exposed through selective opening, and an Al secondary wiring layer 47 is formed. Since the primary wiring layer 45 is arranged in the first opening zone partly in contact with the bottom of the substrate, a bottom will not be formed to provide the second opening, and hence there occurs no disconnection of the secondary wiring layer. Furthermore, there may be no room required between the first and the second holes, and hence integrity can be improved. |
