| 摘要 |
<p>PURPOSE:To prevent the disconnection of lower electrodes and the short circuit defects between the lower electrodes and upper electrodes by the defects of insulating films by constituting the lower electrodes of the capacity elements of at least two kinds of conductive materials having etching selectivity. CONSTITUTION:Gate bus lines 20, auxiliary capacity bus lines 30, auxiliary capacity electrodes 3 and gate electrodes 2 which are the lower electrodes are formed of the 1st and 2nd conductive materials on an insulating substrate 1. The gate insulating film 4 and a semiconductor film 5 are deposited and the semiconductor film 5 is formed to island shapes. The insulating film defects 13 to 16 arise in the gate insulating film 4 by all means in such a case. Only the 1st conductive material of, for example, the insulating film defect 14 is removed if the 1st conductive material is etched by an etchant which selectively etches the 1st conductive material. Only the 2nd conductive material of the insulating film defects 13, 15, 16 is similarly removed by etching with the etchant which selectively etches the 2nd conductive material. Display electrodes 6, source electrodes 7 and drain electrodes 8 which are the upper electrodes are thereafter formed.</p> |
