发明名称 PHOTOCOUPLER WITH BUILT-IN SCHOTTKY BARRIER DIODE
摘要 <p>PURPOSE:To make pulse response speed higher than conventional speed by suppressing charge storage between a collector and a base. CONSTITUTION:This photocoupler suppresses the charge storage between the collector and the base by providing a light emitting diode 2 to emit light while responding to an input electric signal, photodiode 3 to generate a current while responding to this light emission, transistor 4 to obtain the amplified current at the emitter and the collector while connecting the base to one terminal of the photodiode 3, and Schottky barrier diode 5 for speed-up which is connected between the collector and the base of the transistor 4.</p>
申请公布号 JPH0522102(A) 申请公布日期 1993.01.29
申请号 JP19910166055 申请日期 1991.07.08
申请人 NEC CORP 发明人 NINOMIYA HIROSHI
分类号 H01L31/12;H03K17/78 主分类号 H01L31/12
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