| 摘要 |
PURPOSE:To provide a semiconductor memory in which coupling noise between bit lines is suppressed effectively. CONSTITUTION:The semiconductor memory comprises transistors Q41, Q42 for precharging a bit line with a voltage Vcc, transistors Q31-Q34 for precharging the bit line with a voltage Vss or fixing the potential of the bit line, and a bit line selected by an address. The semiconductor memory further comprises short circuit transistors Q11, Q12 for short-circuiting the bit lines precharged, respectively, with voltages Vcc and Vss to set a voltage of (Vcc + Vss)/2 and precharge transistors Q21, Q22 for finely regulating the precharge potential of selected bit line wherein the potential of non-selected bit lines sandwiching the selected bit line is fixed through control of the transistors Q31-Q34 during data read-out operation. |
