| 摘要 |
PURPOSE:To maintain a sufficient capacity of a capacitor even when a semiconductor device is integrated by forming a capacitor lower electrode in the shape of a cylinder extending vertically on the main surface of a semiconductor substrate and further installing a gusset portion extending along the main surface. CONSTITUTION:A capacitor lower electrode 34 is formed on a source/drain region 6 in the shape of a cylinder, extending vertically to a silicon substrate 1, which more increases the surface area of the capacitor for same flat area as compared with the prion art construction. A gusset portion 34a comprising a conductor is formed on a side portion of a capacitor lower electrode 34 in such a fashion that it may extend along the main surface of the silicon substrate 1. The surface area of the capacitor lower electrode is further increased on this gusset portion 34a. This construction makes it possible to maintain a sufficient amount of capacitor even when devices are further miniaturized. |
