DIELECIRIC GATE TYPE FIELD EFFECT SEMICONDUCTOR DEVICE AND FABRICATION THEREOF

摘要

PURPOSE:To improve the characteristics and reliability of an active type liquid crystal display device, or the like, using a dielectric gate type FET transistor as a drive element for a pixel by forming a dielectric film around a gate electrode, and by using a non-photosensitive semiconductor. CONSTITUTION:A dielectric gate type FET transistor in which the distance between a feeding point of the source regions 5 and 5' and drain regions 6 and 6' and the end of a channel is shortened. In such an FET transistor, semiconductor films 2 and 2' designated for the formation of a source region, a drain region, and a channel region of the dielectric gate type FET transistor contain oxygen, carbon and nitrogen 1X10<20>cm<-3> or more and 20 atomic % or less.