| 摘要 |
PURPOSE:To increase the capacity of a capacitor by widening a surface area of a polysilicon-made storage electrode whose polysilicon is adapted to grow twice and adopting lamination structure by etching. CONSTITUTION:On a silicon substrate 21, a contact hole 27 is bored. There grows first polysilicon which is a storage electrode including its portion so as to form a storage electrode 28. After the formation, a middle insulation film 26 is isotropic-etched so as to emboss the upper part of the storage electrode 28 in shape. Then, there grows the second polysilicon 29. After the growth of the polysilicon, only the portion of the polysilicon film 29 is etched on the whole surface so that a storage electrode 30 under lamination structure may be obtained. This construction makes it possible to provide a sufficient capacity of a capacitor even when a storage electrode at the capacitor section of memory cells is shaped under lamination structure and its area is increased and more fined and highly integrated. |
