| 摘要 |
PURPOSE:To activate impurities of second polysilicon and reduce resistance of a part of first and second polysilicon by generating second polysilicon to completely maintain conductivity with first polysilicon, introducing impurities with a silicon nitride film as a mask and performing thermal treatment. CONSTITUTION:Thickness of polysilicon 101 is approximately 750Angstrom , and boron or phosphor is introduced as impurities. Then a silicon nitride film 102 is entirely generated by approximately 1000Angstrom by CVD method. Then the nitride film 102 is opened to form an opening 103. Then polysilicon 104 is selectively generated with the silicon nitride film 102 as a mask. Further an interlayer insulation film 105 is entirely formed. By subsequent thermal treatment with the interlayer insulation film 105 included, a low resistance part 106 and a high resistance part 107 can be formed in the polysilicon 104. |
