SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To reduce the wiring capacity of a sub-output line and increase the speed of data read out from a semiconductor device. CONSTITUTION:A pair of main output lines 3 are connected with a pair of sub-output lines 2 substantially at the middle position of the sub-output lines 2. Therefore, this construction makes it possible to reduce the wiring capacity of the sub-output lines 2 which ranges from a memory cell array 1 to the main output lines 3 and hence highly speed up the reading out of data.