发明名称 FINE PATTERN FORMING METHOD
摘要 PURPOSE:To make greater the difference in the developing speed between a resist part corresponding to a light-transmitting part on a photomask and a resist part corresponding to a mask part, and to enhance the contrast by a method wherein, before selectively adding an anti-dry developing material to the surface of a resist, the surface of the resist is alkali-treated. CONSTITUTION:After a resist 2 is selectively exposed by using a photomask, the surface is treated with an alkaline solution. By this treatment, the exposed resist part is dissolved. Also, by this treatment, on non-exposed or weak-exposed part of the resist 2, a film 3 for preventing a sililation reagent from permeating which comprises a polymerize film. Thereafter, when a sililation treatment is conducted, the film 3 for preventing the sililation reagent from permeating serves as a mask, and the sililation reagent is introduced into only the resist part corresponding to a light-transmitting part 1a on a photo mask 1 to form an anti-dry developing part. Accordingly, it is possible to make greater the difference in the developing speed between the resist part corresponding to the light-transmitting part 1a and the resist part corresponding to a mask part 1b.
申请公布号 JPH0521333(A) 申请公布日期 1993.01.29
申请号 JP19910173634 申请日期 1991.07.15
申请人 HITACHI LTD 发明人 MORIUCHI NOBORU;SHIRAI SEIICHIRO
分类号 G03F7/38;H01L21/027;H01L21/302;H01L21/3065 主分类号 G03F7/38
代理机构 代理人
主权项
地址