| 摘要 |
With MMIC circuits, that is to say microwave integrated circuits, a variable-capacitance diode implanted within the circuit, in order to form a resonant circuit therefrom with an adjustable tuning frequency, can withstand only low high-frequency (Vh) and bias (Vc) voltages; the frequency variation band of the resonant circuit including such a diode is thus limited and its behaviour relative to noise is mediocre. With respect to a single diode of capacitance Cd, the use of n diodes (Cd1-Cd5) mounted in series, of capacitance substancially n times larger than that of the single diode and combined with balancing resistors (R1-R5), makes it possible to divide by n the voltages applied to each of these diodes and thus to enhance the behaviour relative to noise of the resonant circuit, while keeping for it a wide frequency variation band. Application, in particular, to variable-capacitance gallium arsenide diodes for MMIC circuits. <IMAGE>
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