| 摘要 |
PURPOSE:To grow a magnesia spinel film of good crystallinity and uniformity epitaxially on a substrate, by feeding AlCl3 and MgCl2 gas formed in two raw material chambers to a growth chamber, and reacting the gases with CO2. CONSTITUTION:A raw material chamber 11 having the second raw material chamber 13 on the opened side of the first raw material chamber 12 is connected to a growth chamber 14 through a division plate 15. Aluminum is introduced into a boat 20, and MgCl2 is introduced into a boat 21. The boats 20 and 21 are placed in the respective raw material chambers 12 and 13. HCl gas and N2 gases are introduced from the first pipe 16 into the raw material chamber 12, and N2 gas is introduced from the second pipe 17 into the raw material chamber 13. Substrates 23 are placed on a holder 22 in the growth chamber 14, and the respective gases of CO2, H2 and N2 are introduced from the third pipe 18. AlCl3 formed in the raw material chamber 11 by heating and MgCl2 gas are transferred through a bypass pipe 19 to the growth chamber 14 and reacted with CO2 to form MgO.Al2O3. Thus, the aimed magnesia spinel is epitaxially grown on the substrates 23. |
