| 摘要 |
<p>After an interlayer insulator film (4) is deposited on a wiring conductor (3) formed on a semiconductor device element and is then planarized, a first conducting film (5) and a first insulating film (9) are deposited in that order. Thereafter, a through hole (8) is formed, and a second conducting film (10) and a second insulating film (11) are deposited and then etched back so that these films remain on only a side wall surface of the through hole. The through hole is then filled with a metal plating (Fig. 1D), and the etching-back is performed again. Thereafter, an upper level wiring conductor (7) is plating-grown by supplying an electric current to the first conducting film (5), and the second conducting film (10) remaining on the side wall surface and the lower level wiring conductor (3). Thus, a planarized wiring conductor having only a slight step can be obtained in a process for forming a wiring for a semiconductor device by an electroplating method. <IMAGE></p> |
