发明名称 |
SEMICONDUCTOR MEMORY REDUNDUNCY |
摘要 |
A redundancy device increases redundancy efficiency in a semiconductor memory device. Block select signals BLS each determined by a row address are applied to a fuse circuit MFB which also receives column addresses and generates redundancy signals REN. These are passed via selector circuits RS to redundant column decoders RCD, and to a circuit NDC for controlling normal column decoders NCD. Use of both a row address and column address for column redundancy control permits a decrease in the area of redundant cell array as well as an increase in the efficiency of the redundancy operation. <IMAGE> |
申请公布号 |
GB2258066(A) |
申请公布日期 |
1993.01.27 |
申请号 |
GB19910023485 |
申请日期 |
1991.11.05 |
申请人 |
* SAMSUNG ELECTRONICS CO. LIMITED |
发明人 |
HYEON-SOON * JANG |
分类号 |
G11C11/401;G11C29/00;G11C29/04 |
主分类号 |
G11C11/401 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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