发明名称 |
METHOD OF FABRICATING METALLIZED CHIP CARRIERS FROM WAFER-SHAPED SUBSTRATES |
摘要 |
A method for simultaneously manufacturing metallized carriers from wafer-shaped substrates is described, wherein such wafer-shaped substrates permit the use of standard IC fabrication apparatus and methods. As a result, very thin and finely dimensioned traces can be deposited. Thin-film manufacturing techniques are used to create the high-density traces on the surface of the chip carriers, thereby permitting direct connections from the IC to the periphery of the carrier without the need for vias. A lid hermetically seals and protects the package. The traces are comprised of a plurality of metals to facilitate bonding, each of the metals homogeneous for a portion of the trace. One metal portion of the trace is of a type compatible with an IC chip placed in the carrier. Another metal portion of the trace is of a type compatible with a trace on a printed circuit board. A metal barrier is interposed between the metals to prevent metal diffusion from one metal to an adjoining portion of another metal.
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申请公布号 |
US5182420(A) |
申请公布日期 |
1993.01.26 |
申请号 |
US19900506729 |
申请日期 |
1990.04.09 |
申请人 |
CRAY RESEARCH, INC. |
发明人 |
STEITZ, RICHARD R.;CHRISTIE, DIANE M.;NEUMANN, EUGENE F.;AUGUST, MELVIN C.;NELSON, STEPHEN |
分类号 |
H01L21/48;H01L23/13;H01L23/498;H01L23/538 |
主分类号 |
H01L21/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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