发明名称 |
METHOD FOR DIFFUSING AN N TYPE IMPURITY FROM A SOLID PHASE SOURCE INTO A III-V COMPOUND SEMICONDUCTOR |
摘要 |
A method for diffusing n type impurities from a solid phase source into a III-V compound semiconductor includes depositing an amorphous or polycrystalline selenium or sulfur film on the III-V compound semiconductor and diffusing selenium or sulfur from the film into the compound semiconductor by annealing. Highly controllable diffusion of n type impurities in a high concentration is achieved.
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申请公布号 |
US5182229(A) |
申请公布日期 |
1993.01.26 |
申请号 |
US19910798740 |
申请日期 |
1991.11.27 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
ARIMOTO, SATOSHI |
分类号 |
C30B31/02;H01L21/18;H01L21/225 |
主分类号 |
C30B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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