| 摘要 |
In the present invention, a stable and uniform texturized surface of a conductive structure is developed by annealing, oxidizing and etching a layer of metal silicide that has been deposited over a semiconductive material. Using this process during fabrication of memory cell in a DRAM will increase storage node capacitance by creating texturized capacitor cell plates that will retain their textured surfaces throughout implementation of conventional DRAM fabrication processes.
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