Insulated gate bipolar transistor and method of manufacturing the same

摘要

In the present invention, baneful influences such as the reduction of the threshold voltage due to the irradiation of an ionizing radiation such as an electron beam and a light ion beam are removed to practice the lifetime control of an IGBT with good controllability. Basically, the lifetime control without change in the threshold voltage is implemented by increasing the threshold voltage on or before irradiating the ionizing radiation so as to cancel the influence of each other. Further, the lifetime control without change in the threshold voltage is implemented with higher accuracy by irradiating a light ion beam from a rear main electrode side so as to cause crystal defects locally in a specific region in an epitaxial layer.