GROWTH OF SEMI-INSULATING INDIUM PHOSPHIDE BY LIQUID PHASE EPITAXY

摘要

In a method for Liquid Phase Epitaxy (LPE) of semiinsulating InP, a solution of P, Ti and a p-type dopant in molten In is cooled in a non-oxidizing ambient at a surface of a substrate to grow an epitaxial layer of doped InP on the surface. The concentration of p-type dopant in the solution is such as to provide a concentration of p-type dopant in the grown epitaxial layer greater than the aggregate concentration of any residual contaminants in the grown epitaxial layer, and the concentration of Ti in the solution is such as to provide a concentration of Ti in the grown epitaxial layer greater than the concentration of p-type dopant in the grown epitaxial layer. The required melt concentrations are determined empirically. The method can be performed at temperatures below 650 degrees Celsius and is particularly suited to the LPE growth of semi-insulating InP to isolate InP-InGaAsP buried heterostructure lasers.