发明名称 Method of developing a self-developing resist
摘要 Self-developing photoresists are developed by exposing the substrate on which they are exposed to a light beam or other energy source which is absorbed by the substrate and which raises the substrate temperature to the thermal decomposition temperature of the overlying photoresist. This exposure may be done through the photoresist layer with a light beam having a frequency to which the photoresist is substantially transparent or may be done from the backside of the substrate using a light beam which is absorbed by the substrate itself if it is sufficiently thin, or by a thin layer disposed on a transparent substrate.
申请公布号 US5182188(A) 申请公布日期 1993.01.26
申请号 US19900546230 申请日期 1990.06.29
申请人 GENERAL ELECTRIC COMPANY 发明人 COLE, JR., HERBERT S.;ROSE, JAMES W.;GUIDA, RENATO;LIU, YUNG S.
分类号 G03F7/20;H05K3/00 主分类号 G03F7/20
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