MANUFACTURING METHOD OF CONDUCTIVITY MODULATING TYPED MOSFET,申请号KR19890002652-传众专利搜索

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发明名称	MANUFACTURING METHOD OF CONDUCTIVITY MODULATING TYPED MOSFET
摘要
申请公布号	KR930000606(B1)	申请公布日期	1993.01.25
申请号	KR19890002652	申请日期	1989.03.03
申请人	FUJI ELECTRIC CO., LTD.	发明人	SEKI, YASUKASU
分类号	H01L29/68;H01L21/331;H01L21/336;H01L29/739;H01L29/78;(IPC1-7):H01L21/16	主分类号	H01L29/68
代理机构		代理人
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地址

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