| 摘要 |
A method for manufacturing a cell with self-aligned capacitor contact comprises (A) forming field oxide film (202) on semiconductor substrate (201) and growing gate oxide film (215), (B) depositing gate polysilicon (203) and a 1st oxide film (204) and patterning them to form gate, (C) forming impurity layers (205a,205b) on (201), (D) depositing a 2nd oxide film (206) and stack polysilicon (207) and forming storage contact, (F) forming storage node electrode and dielectric layer on it, (G) forming plate electrode and capacitor, (H) removing bit line contact part and implanting ions into (205b), and (I) depositing a 3rd oxide film (213) and a 4th oxide film (214) to form bit line contact and bit line.
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