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经营范围
发明名称
MANUFACTURING METHOD OF INSULATED GATE MOSFET
摘要
申请公布号
KR930000605(B1)
申请公布日期
1993.01.25
申请号
KR19890002651
申请日期
1989.03.03
申请人
FUJI ELECTRIC CO., LTD.
发明人
SEKI, YASUKASU
分类号
H01L29/68;H01L21/266;H01L21/331;H01L21/336;H01L29/10;H01L29/739;H01L29/78;(IPC1-7):H01L21/16
主分类号
H01L29/68
代理机构
代理人
主权项
地址
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