发明名称 GLASS SEALING TYPE DIODE AND MANUFACTURE THEREOF
摘要 PURPOSE:To eliminate an improper opening between a semiconductor pellet and a Dumet electrode by coating and sintering phosphor copper solder on required parts of the pellet in the state of a wafer and soldering only a part of the facing surfaces of the pellet and the Dumet electrode with the phosphor copper solder. CONSTITUTION:Masks 33a, 33b in which holes are opened at the positions corresponding to parts of the pellet are covered on the wafer 23, the phosphor copper solder pastes 34a, 34b are coated on the parts of the pellet through the holes, the wafer 23 is heated at 700 deg.C or the like, and a phosphor copper solder layer is formed thereon. Thereafter, the wafer 23 is cut, the cut wafer 23 is interposed between two Dumet electrodes 11, a glass sleeve 15 is covered thereon, is heated at approx. 700 deg.C, and the pellet 14 and the Dumet electrode 11 are fixedly secured at the parts of the confronting surfaces of the phosphor copper solders 44a, 44b and are sealed with the glass sleeve 15. Thus, the improper opening of the diode can be prevented for a mass production.
申请公布号 JPS5660042(A) 申请公布日期 1981.05.23
申请号 JP19790135213 申请日期 1979.10.22
申请人 HITACHI LTD 发明人 MATSUZAKI MITSUSACHI
分类号 H01L21/52;H01L23/48;H01L23/488 主分类号 H01L21/52
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