| 摘要 |
PURPOSE:To manufacture a CCD having a simple control of a potential well by forming N type and P type semiconductor regions in a semiconductor, thereby forming potential wells having different depth each other under the semiconductor. CONSTITUTION:A thick SiO2 layer 2a and a this SiO2 layer 2b are formed on the surface of a P type Si semiconductor substrate 1, and a polycrystalline Si layer 3 is formed thereon. Subsequently, an Si3B4 layer is formed on a part of the layers 3 and 2b, and an Si5P4 glass layer 5 is entirely formed further thereon. It is heated in this state, B and P are thus diffused in the layer 3, and semiconductor layers 3P, 3N of P type and N type contacting at the boundary between the layers in the P-N junction can be obtained. Thereafter, a contact hole for forming an electrode is formed in the glass layer on the polycrystalline Si layer of the Si layer 2a, an electrode A is formed on the layers 3P, 3N of the contact hole part, and an electrode B is simultaneously formed on the layer 2b. |
