| 摘要 |
<p>PURPOSE:To prevent yield at a low voltage by furnishing a P-type semiconductor layer having a low carrier concentration while surrounding the P-type semiconductor region of a semiconductor electron emitting element using a Schottky barrier joint, and eliminating necessity for any guard ring consisting of high concentrating N-type semiconductor. CONSTITUTION:A semiconductor electron emitting element is constructed through the use of a Schottky barrier joint from a metal electrode 107 and a high concentration P-type semiconductor region 104, and in this element a P-type semiconductor layer 102 is provided which has a lower carrier concentration than a P-type semiconductor region 103 while surrounding it. This enlarges the radius of curvature of the perimeter of void layer formed by impressing a counter-bias on the Schottky barrier joint, and at the time of impression of a voltage causing avalanche yield to the region 104, it is possible to prevent yield at its perimeter. Any guard ring of high concentration N-type semiconductor as necessary according to the conventional technique can be omitted, which should simplify the manufacturing process and allow making the element in a small size.</p> |
