| 摘要 |
PURPOSE:To easily obtain a semiconductor laser having an excellent pattern accuracy by forming a pattern of a diffraction grating by using a contraction projecting exposure having an ultraviolet ray as a light source and a phase shift mask. CONSTITUTION:A pattern shape of a resist 21 of a predetermined diffraction grating is obtained on a semiconductor laser substrate 20 by 1/5 contraction exposure by using a phase shift mask C1 and an i-type beam stepper. Then, a connecting error of connecting parts of the respective patterns becomes 0.25% or less of a period of the grating. Since this process uses a projecting exposure with ultraviolet ray, its throughput is high, and no damage of the substrate and the mask is observed. The mask pattern forming process is faster as compared with a photomask method. Thus, when a submicron diffraction grating is manufactured by a contraction-exposure by using the ultraviolet ray exposure method and the phase shift mask and its periodic uniformity can be improved, and improvements in resolution and throughput can be realized. |
