| 摘要 |
PURPOSE:To provide a Schottky barrier diode capable of conducting a greater forward current with reduced power loss and capable of satisfactorily interrupting a backward current. CONSTITUTION:A protruded portion 3 comprising a high impurity concentration semiconductor material is provided on the upper surface of a semiconductor substrate 2. A low impurity concentration layer 4 is provided partly in the high impurity concentration protruded portion 3 to increase the spreading of a depletion layer. An ohmic metal 5 is provided on the upper surface of the protruded portion 3, and a Schottky electrode 6 is provided on the protruded portion 3 and surroundings thereof from the upper portion of the ohmic metal 5. Further, an counter electrode 7 with use of ohmic contact is provided on the lower surface of the semiconductor substrate 2. |
