| 摘要 |
PURPOSE:To obtain a highly reliable semiconductor device and to increase the yield at the time of manufacture of the device by a method wherein the characteristics of the interface between a surface protective film and a compound semiconductor layer are stabilized. CONSTITUTION:A semiconductor device is characterized in that it has a plurality of electrodes 4, 5 and 6 formed on the surface of a compound semiconductor layer 3, a silicon layer 7 formed on the semiconductor layer 3 surface between the electrodes 4, 5 and an insulating film 8 formed on the layer 7. |
