INSULATING GATE TYPE BIPOLAR TRANSISTOR,申请号JP19910160708-传众专利搜索

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发明名称	INSULATING GATE TYPE BIPOLAR TRANSISTOR
摘要
申请公布号	JPH0513767(A)	申请公布日期	1993.01.22
申请号	JP19910160708	申请日期	1991.07.02
申请人	FUJI ELECTRIC CO LTD	发明人	SAITO TATSU
分类号	H01L29/78;H01L21/336	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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