| 摘要 |
PURPOSE:To obtain a semiconductor device where a die is high in positional accuracy by a method wherein a plating provided onto a die pad is formed as similar to a die in shape and slightly smaller than it in area. CONSTITUTION:A plating 5 where a die 1 is mounted and which is smaller than the die 1 and similar to it in shape is provided onto a die pad 2, and a brazing material 4 and the die 1 are mounted on the plating 5. The die pad 2 is made to pass above a heater heated up to a temperature at which the brazing material 4 is fused, where a tunnel-like structure is provided onto the heater and a curtain of N2 shower is provided to the inlet and the outlet of the tunnel concerned to retain the inner atmosphere of the tunnel. By this setup, when the brazing material 4 spreads over the die pad 2, a fillet of brazing material is formed at the ends of the rear of a chip and a plating as the plating is smaller than the chip in size, so that the chip can be bonded at a position as designed.
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