| 摘要 |
PURPOSE:To get a static RAM which is storing predetermined information, without performing write-in operation immediately after power ON, by setting the resistance values of a pair of resistors used as load to the values different from each other, within one memory. CONSTITUTION:When having turned on a power source 1, a current flows from the power source 1 to a memory cell through resistors 63 and 64, and the potentials of nodes N3 and N4 rise. But, since the resistance value of the resistance 63 is larger than that of the resistor 64, the current flowing to the resistor 63 becomes smaller than the current flowing to the resistor 64. Accordingly, a driver transistor 5 gets in on condition, and a driver transistor 6 gets in off condition, and data of L is preserved in the node N3, and data of H in the node N4. Therefore, at power on, the data that the memory cell has is determined by the level of the resistance value of load resistance, and the information preserved in the SRAM at power on can be stored beforehand in manufacturing process. |
