| 摘要 |
PURPOSE:To sufficiently increase an effective band difference between a quantum well layer and a light confinement layer by forming the light confinement layer of a compound semiconductor material containing phosphorus and having larger band gap than that of GaAs such as (AlyGa1-y)zIn1-zP (0<=y<1). CONSTITUTION:An optical waveguide layer is formed of an active layer having GaInAs quantum well layers 6a, 6b, 6c, 6d, and light confinement layers 4, 7 vertically holding the active layers from above and below. Here, as the material of the layers 4, 7, compound semiconductor containing phosphorus and having larger band gap than that of GaAs such as (AlyGa1-y)zIn1-zP (0<=y<1), is used, and a band gap difference between the layers 6a, 6b, 6c, 6d and the layers 4, 7, is increased as compared with that of prior art. Thus, a threshold value current is reduced, operating characteristics at a high temperature are improved, and an increase in an efficiency of a semiconductor laser and an increase in an output can be realized. |
