发明名称 SERIES ACCESS MEMORY COMMON CIRCUIT IN DUAL PORT MEMORY
摘要 <p>PURPOSE: To reduce chip area and enable RAM-to-RAM fast transmission by making two adjacent RAMs share one SRAM. CONSTITUTION: Data transmission transistors(TR) T1-Tn and T'1-T'n which are applied at their gates with block select signals ISO1 and ISO2 are coupled with RAMs I and II, which are coupled with one SRAM through those data transmission TRs T1-Tn and T'1-T'n. Then data transmitted from the RAM I or II is latched by the SRAM in parallel and then outputted as serial output data. Instead of them, data inputted in series are latched by the SRAM, and the data in the SRAM are written to the RAMs I and II through the transmission TRs T1-Tn, and T'1-T'n.</p>
申请公布号 JPH0512858(A) 申请公布日期 1993.01.22
申请号 JP19910279071 申请日期 1991.10.25
申请人 SAMSUNG ELECTRON CO LTD 发明人 CHIYANNKIYU RII
分类号 G11C11/401;G11C7/10;G11C11/00 主分类号 G11C11/401
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