| 摘要 |
PURPOSE:To reduce parasitic resistance of a Schottky diode. CONSTITUTION:An anode electrode A and a cathode electrode K are counter disposed on the surface of an injection layer 1 formed on a semiconductor. A flat plane configuration of at least one of the anode electrode A and the cathode K is tapered so as to be narrowed as it approaches the counter electrode, with a flat plane configuration of the remaining electrode corresponding to the tapered configuration. |
