| 摘要 |
PURPOSE:To avoid reduction in effective length of a resistor part by having a resistant polysilicon film of a predetermined shape adhered to a predetermined interlayer insulation film of a semiconductor chip, coating the resistor polysilicon film with an insulation film having an opening and providing a high melting point metal film. CONSTITUTION:A resistant polysilicon film 108 is adhered to the first interlayer insulation film 107 of a semiconductor chip. The resistant polysilicon film 108 has a body 108 (VS) extending in an X-direction and branches 108 (R1),108(R2) of a short-slip-shape overhanging both sides of the body. The resistant polysilicon film 108 is coated with the second interlayer insulation film 109. The second interlayer insulation film 109 has an opening C provided along the body 108 (VS), and a tungsten film 110 which is a high melting point metal film is provided on the opening C. The tungsten film 110 constitutes one of leads of the polysilicon film resistor element. Thus a change in the lead size during thermal treatment can be substantially ignored thereby improving reproducibility. |
