| 摘要 |
<p>PURPOSE:To surely prevent destruction and malfunction of a semiconductor component by improving a voltage suppression capability when a high voltage pulse is absorbed through the use of a voltage nonlinearity, CONSTITUTION:End face electrodes 3, 3 are formed to both end faces 2a, 2b of a sintered body 2 having a voltage nonlinearity and a side face electrode 4 is formed in the middle of both side faces 2c, 2d. An internal electrode 5 is arranged in the inside of the sintered body 2 and one end face 5a of the internal electrode 5 is connected to one end face electrode 3 and a common electrode 6 in crossing on a plane different from that of the internal electrode 5 is arranged in the inside of the sintered body 2 and both end faces 6a, 6b are connected to the side face electrode 6. Then a resistance film 8 connecting to the common electrodes 6 is formed to the surface of the sintered body 2.</p> |
