发明名称 |
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND MANUFACTURE THEREOF |
摘要 |
PURPOSE:To evenly inject current into the whole active layer for emitting light from the whole active layer while making the light emitted from the active layer hardly shadowed by an electrode as well as making the light hardly reflected on the inner part of the surface of a lighting layer for increasing the output from the title semiconductor light emitting element. CONSTITUTION:A diffusing agent layer 6 working as a non-reflective coated film and meeting the non-reflection requirements is provided on the surface of an upper clad layer 5. Next, impurities are diffused from the diffusing agent layer 6 in the upper clad layer 5 so as to form a high concentration semiconductor region 7 in the upper clad layer 5. |
申请公布号 |
JPH0513811(A) |
申请公布日期 |
1993.01.22 |
申请号 |
JP19910194926 |
申请日期 |
1991.07.08 |
申请人 |
OMRON CORP |
发明人 |
WATANABE HIDEAKI;HAYAMIZU KAZUYUKI |
分类号 |
H01L33/10;H01L33/30;H01L33/40 |
主分类号 |
H01L33/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|