| 摘要 |
PURPOSE:To prevent an Si substrate from being dug by etching of a conductive layer performed upon forming a CG and an FG. CONSTITUTION:Upon forming an interlayer insulating film for electrically insulating a CG and an FG, high concentration impurity ion is doped onto an active region on an Si substrate 8, and rapidly oxidized to form a thin interlayer insulating film 5a with a thick interlayer insulating film 5b. Hereby, a leakage current is prevented from being increased owing to damage on the Si substrate 8 and the Si substrate 8 is prevented from being leaked owing to the same reason.
|
