Semiconductor device e.g. IIL level shifter - uses injection transistor and lateral transistor with opposing insulation zone enclosing collector zone of latter

摘要

The shifter uses a PNP injection transistor (T1) and a lateral PNP transistor (T2) providing the level shifter output signal at its collector (C2). The emitter and collector of the injection transistor (T1) and the emitter and collector of the lateral transistor (T2) are provided as P + zones in an doped region (2,5) providing the base (B1,B2) of each transistor. The collector (C2) of the lateral transistor (T2) is separated from the adjacent highly doped p + zone (6) via highly doped n + insulation zone, with as n type intermediate layer between the latter. ADVANTAGE - Wider range of application.