LEISTUNGS-HALBLEITERBAUELEMENT UND VERFAHREN ZU DESSEN HERSTELLUNG

摘要

The invention relates to a power semiconductor with four zones in which an emitter zone (A) has at least one emitter region (4) and at least a first part (5) of the extractor structure (AS) and in which the first part of the extractor structure is electrically connected to a main electrode (7) via a second part (6) of the extractor structure (AS). The invention prevents the ignition of a parasitic thyristor, for instance with insulated-gate bipolar transistor (IGBT) and gives a pentode-like output characteristics in thyristors.