| 摘要 |
<p>A silicon wafer of a diameter larger than eight inches, whose surfaces are not roughed by cleaning with NH4OH-H2O2, and on which devices of higher performances can be fabricated. A thermal oxidation film is formed on the entire surface of a silicon wafer of a diameter larger than eight inches which is prepared by slicing an ingot made through a pulling method. After removing all the thermal oxidation film of the silicon wafer, the whole surface of the wafer is cleaned with NH4OH-H2O2.</p> |
