| 摘要 |
A method of cleaning, wherein nitrogen and oxygen dissolved in water are degassed and the wettability with water of the surface of a substrate, in particular, a silicon wafer from which the insulating film has been removed is improved, whereby pure water is brought into contact with the surface of silicon, so that even a very small amount of impurities on the silicon can be completely cleaned away, and a system for supplying the pure water. One feature resides in that, in the system for supplying the pure water, a means (10) for degassing nitrogen and oxygen contained in the water is provided in the intermediate portion of a piping for supplying the pure water to a use point (14). Further, another feature resides in that a vessel, in which the pure water and a gas can coexist, is provided between the degassing means and the use point , and the interior of the vessel is filled up with a gas not containing nitrogen and oxygen. Furthermore, a further feature resides in that, in the method of cleaning the gas, the substrate is cleaned by use of the pure water supplied from the system for supplying the pure water. |
