An electron device employing a low/negative electron affinity electron source.

摘要

Electron devices (600) employing electron sources (610) including a material having a surface exhibiting a very low/negative electron affinity such as, for example, the 111 crystallographic plane of type II-B diamond. Electron sources (802, 902) with geometric discontinuities exhibiting radii of curvature of greater than approximately 1000 ANGSTROM are provided which substantially improve electron emission levels and relax tip/edge feature requirements. Electron devices employing such electron sources are described including image generation electron devices, light source electron devices, and information signal amplifier electron devices. <IMAGE>