Process for making a crystal with a lattice gradient.
摘要
Process for manufacturing a crystal containing at least two elements, in which the proportion of at least one of these elements varies in a chosen direction. This process consists in performing a crystal growth by a chemical route in vapour phase by varying with time the proportion of each of the components in the gas from which the deposit is formed. The invention applies to Six-Ge1-x crystals.
申请公布号
EP0524114(A1)
申请公布日期
1993.01.20
申请号
EP19920420227
申请日期
1992.07.02
申请人
INSTITUT MAX VON LAUE - PAUL LANGEVIN (ETABLISSEMENT PUBLIQUE);INSTITUT NATIONAL POLYTECHNIQUE DE GRENOBLE
发明人
ESCOFFIER, ALAIN;MADAR, ROLAND;MAGERL, ANDREAS;MASTROMATTEO, ERIC