发明名称 Process for making a crystal with a lattice gradient.
摘要 Process for manufacturing a crystal containing at least two elements, in which the proportion of at least one of these elements varies in a chosen direction. This process consists in performing a crystal growth by a chemical route in vapour phase by varying with time the proportion of each of the components in the gas from which the deposit is formed. The invention applies to Six-Ge1-x crystals.
申请公布号 EP0524114(A1) 申请公布日期 1993.01.20
申请号 EP19920420227 申请日期 1992.07.02
申请人 INSTITUT MAX VON LAUE - PAUL LANGEVIN (ETABLISSEMENT PUBLIQUE);INSTITUT NATIONAL POLYTECHNIQUE DE GRENOBLE 发明人 ESCOFFIER, ALAIN;MADAR, ROLAND;MAGERL, ANDREAS;MASTROMATTEO, ERIC
分类号 C30B25/02;C30B25/14 主分类号 C30B25/02
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