| 摘要 |
<p>A semiconductor body (10) has a first region (13) of one conductivity type adjacent one major surface (10a) within which is formed a semiconductor device (Rx) having a resistance which varies with temperature. The semiconductor device (Rx) is formed by a second region (14) of the opposite conductivity type formed within the first region (13) and a third region (15) of the one conductivity type formed within the second region (14), with first and second electrodes (16) and (17) being spaced apart on the third region (15) so that a resistive path is provided by the third region (15) between the first and second electrodes (16 and 17) and a reference electrode (18) connecting the second region (14) to a reference potential. The impurity concentrations within the second and third regions (14 and 15) are such that the semiconductor device (Rx) has a temperature coefficient of resistance which changes, generally increases or falls only slightly, with absolute temperature such that the relative temperature coefficient of resistance referred to the sensed temperature is substantially constant. Respective temperature sensing devices may be provided adjacent to and remote from an active semiconductor device to provide a differential temperature sensor. <IMAGE></p> |
